Diodes are made up from two pieces of semiconductor material, either silicon or germanium to form a simple PN-junction and we also learnt about their properties and characteristics. If we now join together two individual signal diodes back-to-back, this will give us two PN-junctions connected together in series that share a common P or N terminal. The fusion of these two diodes produces a three layer, two junctions, and three terminal devices forming the basis of a Bipolar Junction
Transistor, or BJT for short.
Transistors are three terminal active devices made from different semiconductor materials
that can act as either an insulator or a conductor by the application of a small signal voltage.
The transistor's ability to change between these two states enables it to have two basic
functions: "switching" (digital electronics) or "amplification" (analogue electronics). Then
bipolar transistors have the ability to operate within three different regions:
1.Active Region - the transistor operates as an amplifier and Ic = β.Ib
2.Saturation - the transistor is "fully-ON" operating as a switch and Ic = I(saturation)
3.Cut-off - the transistor is "fully-OFF" operating as a switch and Ic = 0
- use it as a switch
- use it as an amplifier (to amplify current or voltage)
- If I don’t apply any voltage to the base terminal, the base current (Ib) will be zero and the transistor will remain in cutoff region since collector current (Ic) will be zero and the output voltage (Vout) will be equal to Vcc(+5 volts) and transistor will act as open switch. i.e (logic 1)
- If I apply input voltage (Vin) to the base terminal, the base current (Ib) will flow. But if I apply “specifically very high input voltage” (very high Vin) , to the base terminal, the base current will increase and thus the collector current current will increase. This increase in collector current will be very high (Ic will be very high) thus the transistor will go in saturation region.